Abstract

• nS films were prepared by chemical bath deposition (CBD) technique at 80C for 4h. The composite film was characterized by using LCR meter. Comparative study on dielectric and charge conduction properties of nS films (1:1), (2:1) and (3:1) were investigated. Dielectric properties of films significantly obtained and indicated the photovoltaic behavior of fabricated films. Dielectric constant (r,),loss tangent (tan) and capacitance (C) were measured different at frequency modes. The charge conduction mechanism was identified by 1/C2-V characteristics. The dopant concentration for p-type conductivity (Na), the depletion layer width (W) and barrier height () were determined from 1/C2-V characteristic.