Abstract

• The crystalline state of undoped ZnO power was examined by X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). Zinc Oxide thin film was fabricated on the p- Si (100) substrate structure by single wafer spin processor at 500⁰C and 600⁰C. The surface morphology and microstructural properties were examined by Scanning Electron Microscopy (SEM). I-V characteristics (illuminated I-V) were investigated by monochromatic halogen lamp (100W). From the current and voltage characteristics under illumination, conversion efficiency (con) and fill factor (Ff) were observed for the cell. The results obtainted were quite suitable and application in used for solar cell application.