INVESTIGATION OF ENERGY BAND GAP OF Sb DOPED SnO2 THIN FILMS

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Abstract
  • Undoped SnO2 and different Sb concentration (2 mol%, 4 mol%, 6 mol% & 8 mol%) were doped with SnO2 thin films by sol-gel process. Undoped SnO2 and Sb doped SnO2 thin films were grown in glass substrate by using spin coating technique and annealed at 500˚C for 1hour. The structural, and optical properties of deposited and doped samples were studied. XRD analysis was carried out to determine the lattice parameters, unit cell volume and crystallite size of the samples. According to the X-ray diffraction spectra the samples were formed with tetragonal structure and preferred orientation alone (110) plane. The dislocation density of the samples are also calculated. From the UV-Visible spectrum, absorption coefficient and the band gap energy of the samples are evaluated.
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  • 45. Dr Zin Mar Win(391-402).pdf
Year
  • 2020
Author
  • Zin Mar Win
Subject
  • Physics
Publisher
  • Myanmar Academy of Arts and Science (MAAS)

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