Abstract

• Al doped CdSe films were deposited on glass substrate using rolling method. Difference concentrations of Al (10 mol%, 20 mol% & 30 mol%) were introduced into the CdSe matrix. The deposited thin films were annealed at 300˚C for 1 hour. The microstructural properties such as lattice parameters, microstrain and dislocation density of the thin films were characterized by X-ray diffraction. Grain size and crystallite variation were studied for Al doping effect. The UVVis spectrometer used to determine optical band gap of thin films.