Abstract

• Junction formation and current transport mechanisms of transparent conducting Sn doped CdO thin films on silicon (Si) substrate have been studied as a function of Sn doping concentration (0.15wt%, 0.20wt% and 0.25wt%). The samples have been investigated using current-voltage (I-V) and capacitance voltage (C-V) measurements in order to define the transport mechanisms in heterostructure and basic electronic parameters. From the current density - voltage, illuminated J-V measurement as well as the photovoltaic response extracted the solar cell parameters. The built-in potential, photo and dark saturation current at Sn doped CdO on p-Si interface are monitored varying Sn doping concentration. It is observed that a high built-in potential form at the Sn 0.25wt% doped CdO/p-Si junction. The current voltage characteristics were analyzed using Schottky and abrupt p-n junction models. The open circuit voltage Voc and saturation current density Jo extracted from the illuminated and dark J-V curves as well as calculated assuming a Schottky junction and an abrupt p-n junction for different Sn doping density ND.