Abstract

• Mn(20mol%) doped CaCO3 ceramic was first prepared by solid-state reaction method at 1000°C for 1 h. The prepared Ca0.80Mn0.20(CO3)2 was deposited on n-Si substrate by using thermal diffusion technique at 400°C for 1 h. Surface morphology of the Ca0.80Mn0.20(CO3)2/ n-Si film was investigated by Scanning Electron Microscope. Surface morphology, grain shape, grain size and diffusion layer thickness of the film were studied in this work. In addition, current-voltage characteristics of Ca0.80Mn0.20 (CO3)2/ n-Si thin film were investigated in dark and four different illuminations of light source. Output currents were observed in the bias voltages of (-5 V - +5 V) with the step voltage of 0.2 V. Light sensitivity and output currents of the film were reported in this work.